Intense electroluminescence from Al2O3/Tb2O3 nanolaminate films fabricated by atomic layer deposition on silicon
Intense electroluminescence from Al2O3/Tb2O3 nanolaminate films fabricated by atomic layer deposition on silicon
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通过硅上原子层沉积制备的 Al2O3/Tb2O3 纳米层压薄膜的强电致发光
DOI：
10.1364/oe.26.009344
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发表时间：
2018-04-02
期刊：
影响因子：
3.8
通讯作者：
Sun, Jiaming
中科院分区：
文献类型：
--
作者：
Yang, Yang;Li, Na;Sun, Jiaming
利用原子层沉积技术在硅基金属-氧化物-半导体结构中制备了Al_2 O_3/Tb_2 O_3纳米叠层薄膜，并在此薄膜中实现了Tb ~（3+）离子的强电致发光。通过对纳米层合结构的精确控制，研究了Tb原子层和掺杂层间距对电致发光机理的影响。由于光学活性Tb 3+离子的减少，EL强度随着过量Tb掺杂剂循环而降低。Tb_2O_3掺杂层之间的交叉弛豫使D-5（3）能级的激发态离子减少，并对D-5（4）能级的绿色电致发光有贡献，这强烈依赖于Al_2O_3子层厚度，临界值约为3 nm。由Tb ~（3+）离子激发的543 nm绿色电致发光的最大功率密度为3.37 mW cm ~（-2），外量子效率为0.73%。通过采用较厚的发光层和Al 2 O3包覆层，实现了效率的进一步提升。(c)根据OSA开放获取出版协议的条款，2018年美国光学学会
Intense electroluminescence (EL) from Tb3+ ions in the Al2O3/Tb2O3 nanolaminate films is achieved in a metal-oxide-semiconductor structure fabricated on silicon, utilizing atomic layer deposition. Precisely controlling of the nanolaminates enables the study on the influence of the atomic Tb layers and the distance between every dopant layers on the EL mechanism. The EL intensity decreases with excessive Tb dopant cycles due to the reduction of optically active Tb3+ ions. Cross-relaxation among adjacent Tb2O3 dopant layers depopulates the excited ions in D-5(3) level and contributes to the green EL from D-5(4) level, which strongly depends on the Al2O3 sublayer thickness with a critical value of similar to 3 nm. The 543 nm green EL from Tb3+ ions shows maximum power density of 3.37 mW cm(-2) and external quantum efficiency up to 0.73%. Further promotion of efficiency is realized by adopting thicker luminescent layer and Al2O3 cladding layer. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement