Flux pinning properties of ErBa2Cu3Oy thin films with BaZrO3 nanorods
Flux pinning properties of ErBa2Cu3Oy thin films with BaZrO3 nanorods
复制标题
BaZrO3 纳米棒 ErBa2Cu3Oy 薄膜的通量钉扎特性
DOI：
10.1088/0953-2048/19/8/019
复制
发表时间：
2006
影响因子：
3.6
通讯作者：
S. Horii
中科院分区：
文献类型：
--
作者：
M. Haruta;T. Fujiyoshi;T. Sueyoshi;K. Dezaki;D. Ichigosaki;K. Miyahara;R. Miyagawa;M. Mukaida;K. Matsumoto;Y. Yoshida;A. Ichinose;S. Horii
采用 PLD 方法制备了带有 BaZrO3 (BZO) 纳米棒的 ErBa2Cu3Oy (ErBCO) 薄膜，以提高临界电流密度 Jc。含有1.5wt％BZO(Er15)的ErBCO薄膜在磁场中的Jc值高于含有0.5wt％BZO(Er05)的ErBCO薄膜的Jc值。当平行于 c 轴施加磁场时，在两种薄膜中都观察到 Jc 的角度依赖性的 Jc 峰值。已发现该峰归因于平行于 c 轴取向的 BZO 纳米棒的通量钉扎。通过将观察到的电传输特性与基于逾渗转变模型的理论表达式进行拟合，得出涡流玻璃-液体转变温度 Tg 和钉扎参数 m。 Er15的Tg值高于Er05。该结果表明，随着 BZO 含量的增加，涡流玻璃相延伸到更高的温度区域。在磁场依赖性中发现了 m 的峰值。这一事实可能是由于 BZO 纳米棒的密度与助熔剂的密度相匹配，这一点已通过 TEM 观察得到证实。
ErBa2Cu3Oy (ErBCO) thin films with BaZrO3 (BZO) nanorods were prepared by a PLD method for an enhancement of the critical current density Jc. The values of Jc for the ErBCO thin film containing 1.5 wt% BZO (Er15) in magnetic fields are higher than those for the ErBCO thin film containing 0.5 wt% BZO (Er05). The peaks of Jc have been observed in the angular dependence of Jc in both the films when the magnetic field is applied parallel to the c-axis. It has been found that the peak is attributed to the flux pinning by BZO nanorods oriented parallel to the c-axis. The vortex glass–liquid transition temperature Tg and the pinning parameter m were derived by fitting observed electric transport properties to the theoretical expression based on the percolation transition model. The value of Tg of Er15 is higher than that of Er05. This result indicates that the vortex glass phase extends to a higher temperature region on increasing the fraction of BZO. The peak of m has been found in the magnetic field dependence. This fact is probably due to matching the density of BZO nanorods with that of fluxoids, which was confirmed by TEM observations.
影响因子：
1.5
作者：
T. Horide;K. Matsumoto;Y. Yoshida;M. Mukaida;A. Ichinose;S. Horii;K. Osamura
通讯作者：
T. Horide;K. Matsumoto;Y. Yoshida;M. Mukaida;A. Ichinose;S. Horii;K. Osamura