Composition and Bandgap-Graded ZnCdSSe Thin Films and Thin Film/Nanowire Hybrid Structures for Potential Optoelectronic Applications
Composition and Bandgap-Graded ZnCdSSe Thin Films and Thin Film/Nanowire Hybrid Structures for Potential Optoelectronic Applications
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DOI:
10.1166/jno.2018.2235
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发表时间:
2018-03
影响因子:
0.6
通讯作者:
S. Turkdogan
中科院分区:
文献类型:
--
作者:
S. Turkdogan
In this work, we have demonstrated the growth and characterization of compositionally graded Zn x Cd1–x S y Se1–y thin films over a single substrate in a single furnace run and CdSe-rich thin film/nanowire hybrid structures for prospective optoelectronic applications. A simple but versatile chemical vapor deposition method relying on the temperature dependent composition deposition was utilized. We have achieved growing full composition graded thin films over a single substrate and any compositional films in the ZnCdSSe material system by placing the substrate along the temperature gradient of the furnace or locating the substrate vertically at an appropriate temperature region, respectively. Thin film/nanowire hybrid structures were also grown in the same manner, but with two steps. The only difference between film and nanowire growths was the presence of Au catalyst material over the growth surface. First, thin film was grown without catalyst material and then Au catalyst layer was sputtered and nanowires on top of the coated film layer were grown as a final step. Materials were grown on either Si or quartz substrates and characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction spectroscopy (XRD) and photoluminescence (PL) techniques. The structural, chemical and optical characterization results show that the products are single crystalline and full composition coverage of ZnCdSSe thin films were obtained over a single substrate and CdSe-rich thin film/nanowire hybrid structures were successfully grown and found to be very promising for optoelectronic applications in particular for photovoltaic devices with 3D pn junctions.