Composition and Bandgap-Graded ZnCdSSe Thin Films and Thin Film/Nanowire Hybrid Structures for Potential Optoelectronic Applications

Composition and Bandgap-Graded ZnCdSSe Thin Films and Thin Film/Nanowire Hybrid Structures for Potential Optoelectronic Applications
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DOI:
10.1166/jno.2018.2235
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发表时间:
2018-03
影响因子:
0.6
通讯作者:
S. Turkdogan
S. Turkdogan
中科院分区:
工程技术4区
文献类型:
--
作者:
S. Turkdogan

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在这项工作中,我们已经证明了在一个单一的炉运行和富硒薄膜/纳米线混合结构的前瞻性光电应用在一个单一的衬底上的组成梯度的Zn x Cd 1-x S y Se 1-y薄膜的生长和表征。利用了一种简单但通用的化学气相沉积方法,该方法依赖于温度依赖性组分沉积。我们通过将衬底沿着炉的温度梯度放置或将衬底垂直放置在适当的温度区域,实现了在单个衬底上生长全成分梯度薄膜以及ZnCdSSe材料体系中的任何成分薄膜。薄膜/纳米线混合结构也以相同的方式生长,但有两个步骤。薄膜和纳米线生长之间的唯一区别是生长表面上存在Au催化剂材料。首先,在没有催化剂材料的情况下生长薄膜,然后溅射Au催化剂层,并在涂覆的膜层的顶部上生长纳米线作为最后步骤。材料生长在Si或石英衬底上,并通过扫描电子显微镜(SEM),能量色散谱(EDS),X射线衍射谱(XRD)和光致发光(PL)技术进行表征。的结构,化学和光学表征结果表明,产品是单晶和完整的组成覆盖的ZnCdSSe薄膜在单一衬底上获得和富硒薄膜/纳米线混合结构的成功生长,并发现是非常有前途的光电应用,特别是与三维pn结的光伏器件。
In this work, we have demonstrated the growth and characterization of compositionally graded Zn x Cd1–x S y Se1–y thin films over a single substrate in a single furnace run and CdSe-rich thin film/nanowire hybrid structures for prospective optoelectronic applications. A simple but versatile chemical vapor deposition method relying on the temperature dependent composition deposition was utilized. We have achieved growing full composition graded thin films over a single substrate and any compositional films in the ZnCdSSe material system by placing the substrate along the temperature gradient of the furnace or locating the substrate vertically at an appropriate temperature region, respectively. Thin film/nanowire hybrid structures were also grown in the same manner, but with two steps. The only difference between film and nanowire growths was the presence of Au catalyst material over the growth surface. First, thin film was grown without catalyst material and then Au catalyst layer was sputtered and nanowires on top of the coated film layer were grown as a final step. Materials were grown on either Si or quartz substrates and characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction spectroscopy (XRD) and photoluminescence (PL) techniques. The structural, chemical and optical characterization results show that the products are single crystalline and full composition coverage of ZnCdSSe thin films were obtained over a single substrate and CdSe-rich thin film/nanowire hybrid structures were successfully grown and found to be very promising for optoelectronic applications in particular for photovoltaic devices with 3D pn junctions.