Galvanic Contact Deposition of CdTe Layers Using Ammoniacal Basic Aqueous Solution
Galvanic Contact Deposition of CdTe Layers Using Ammoniacal Basic Aqueous Solution
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DOI：
10.1149/1.1870756
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发表时间：
2005-04
影响因子：
3.9
通讯作者：
K. Arai;Souichi Hagiwara;K. Murase;T. Hirato;Y. Awakura
中科院分区：
文献类型：
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作者：
K. Arai;Souichi Hagiwara;K. Murase;T. Hirato;Y. Awakura
研究了氨碱性溶液中CdTe层的电接触沉积，并对其沉积行为进行了研究。研究了镀层的结构和电学性能，并与在相同溶液下用普通电沉积法制备的镀层进行了比较。在接触沉积过程中，阴极电位总是自发地保持在0.7 V左右，尽管CdTe也沉积在Cd片上，即阳极上。电流密度随时间逐渐减小，与常规恒电位电沉积一样。在照明下，电流效率约为100%，而在黑暗中则低于50%。这些行为与在相同电解质的正常电沉积中观察到的行为相同。在光照下和黑暗中沉积的产物都是具有化学计量成分的多晶碲化镉层。沉积的CdTe层具有p型导电性，电阻率约为10.7 V cm。
The galvanic contact deposition of CdTe layers from ammoniacal basic solutions was carried out, and their deposition behaviors were investigated. The structural and electrical properties of deposits were examined and then compared with those of deposits prepared by normal electrodeposition from the same solutions. The cathode potential was always spontaneously kept at around ˛0.7 V vs. standard hydrogen electrode during the contact deposition although CdTe also deposited on the Cd sheet, that is, the anode. The current density gradually decreased with time just like that in the normal potentiostatic electrodeposition. The current efficiency was approximately 100% under illumination, whereas it was less than 50% in the dark. These behaviors were the same as those observed in normal electrodeposition from the same electrolytes. The resulting deposits both under illumination and in the dark were polycrystalline CdTe layers with almost stoichiometric composition. The as-deposited CdTe layer had a p-type conduction with resistivity of the order of 10 7 V cm.