Phase Transformations and Phase Stability in Epitaxial β-GaN Films†‡
Phase Transformations and Phase Stability in Epitaxial β-GaN Films†‡
复制标题
外延 β-GaN 薄膜中的相变和相稳定性†‡
DOI：
10.1002/anie.199721111
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发表时间：
1997
影响因子：
--
通讯作者：
K. Ploog
中科院分区：
文献类型：
--
作者：
A. Trampert;O. Brandt;K. Ploog
单相GaN的制备对于光电器件的实现非常重要，但由于存在两种多型体（α-GaN六边形，β-GaN立方体，亚稳态）而变得复杂。立方基体与多型六方夹杂物之间的界面取向以及界面的特殊性质对转变后的多型体稳定性的影响对于β-GaN到α;-GaN的相变都是至关重要的。
The production of single‐phase GaN, which is important for the realization of optoelectronic devices, is intricated by the existence of two polytypes (α‐GaN hexagonal, β‐GaN cubic, metastable). Both the orientation of the interface between teh cubic matrix and the polytypic hexagonal inclusion and the influence of the specific nature of the interface on the stability of the transformed polytype are of fundamental importance for the phase transformation of β‐to α;‐GaN.