Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator
Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator
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DOI：
10.7567/jjap.57.02ca08
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发表时间：
2018-01
影响因子：
1.5
通讯作者：
M. Hiroki;Y. Maeda;S. Ohmi
中科院分区：
文献类型：
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作者：
M. Hiroki;Y. Maeda;S. Ohmi
有机场效应晶体管（OFFET）的缩放对于高密度集成是必要的，并且为此，需要具有顶栅配置的OFFET。已经有几篇关于有机半导体或绝缘体层的无损光刻工艺的报道。然而，仍然难以制造具有顶栅配置的按比例缩放的OFFET。在本研究中，我们研究了利用非晶（α）红荧烯栅绝缘层的顶栅结构OFFET的剥离过程和器件特性。我们已经证实α-红荧烯显示出绝缘性质，其提取的线性迁移率为2.5 × 10−2 cm 2/（V·s）。栅极长度和宽度分别为10和60 µm。从这些结果来看，采用α-红荧烯栅绝缘体的顶栅结构的OFET有望用于规模化OFET的高密度集成。
The scaling of organic field-effect transistors (OFETs) is necessary for high-density integration and for this, OFETs with a top-gate configuration are required. There have been several reports of damageless lithography processes for organic semiconductor or insulator layers. However, it is still difficult to fabricate scaled OFETs with a top-gate configuration. In this study, the lift-off process and the device characteristics of the OFETs with a top-gate configuration utilizing an amorphous (α) rubrene gate insulator were investigated. We have confirmed that α-rubrene shows an insulating property, and its extracted linear mobility was 2.5 × 10−2 cm2/(V·s). The gate length and width were 10 and 60 µm, respectively. From these results, the OFET with a top-gate configuration utilizing an α-rubrene gate insulator is promising for the high-density integration of scaled OFETs.