Phase stability of epitaxially grown Ti2AlN thin films
Phase stability of epitaxially grown Ti2AlN thin films
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DOI：
10.1063/1.2335681
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发表时间：
2006-08-14
影响因子：
4
通讯作者：
Moeller, W.
中科院分区：
文献类型：
--
作者：
Beckers, M.;Schell, N.;Moeller, W.
用原位X射线衍射和卢瑟福背散射研究了反应溅射在MgO(111)和Al_2O_3(0001)衬底上制备的M(n+1)AX(N)相(M：早过渡金属，A：A族元素，和X：C和/或N)Ti2AlN薄膜的相稳定性。高衬底温度沉积导致Ti2AlN外延生长，衬底平面平行于衬底表面。与已报道的块体Ti-Al-N M(n+1)ax(N)相在空气中的高热稳定性不同，Ti2AlN薄膜在真空中已经在800℃左右分解，分解过程是Al向外扩散和蒸发，然后形成的Ti2N原子层脱孪晶形成立方TiNx和中间相。(C)2006年美国物理研究所。
The phase stability of M(n+1)AX(n) phase (M: early transition metal, A: A-group element, and X: C and/or N) Ti2AlN thin films reactively sputtered onto MgO(111) and Al2O3(0001) substrates has been investigated by in situ x-ray diffraction and Rutherford backscattering. High substrate temperature deposition results in epitaxial Ti2AlN growth with basal planes parallel to the substrate surface. In contrast to reported high thermal stability for bulk Ti-Al-N M(n+1)AX(n) phases in air, Ti2AlN thin films in vacuum decompose already at similar to 800 degrees C. The decomposition proceeds by outward Al diffusion and evaporation, followed by detwinning of the as-formed Ti2N atomic layers into cubic TiNx and intermediate phases. (c) 2006 American Institute of Physics.