Caution: Abnormal Variability Due to Terrestrial Cosmic Rays in Scaled-Down FinFETs
Caution: Abnormal Variability Due to Terrestrial Cosmic Rays in Scaled-Down FinFETs
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DOI：
10.1109/ted.2019.2899056
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发表时间：
2019-04-01
影响因子：
3.1
通讯作者：
Meyyappan, M.
中科院分区：
文献类型：
--
作者：
Kim, Jungsik;Lee, Jeong-Soo;Meyyappan, M.
研究了不同块体FinFET技术节点的位移损伤缺陷的可变性。自然地面辐射在硅沟道区域的任意位置引入了点状缺陷到簇状缺陷的随机位移损伤。以缺陷簇的能级、位置和大小为变量，借助TCAD仿真研究了不同技术节点对器件性能的影响。研究发现，即使是位移缺陷，当技术节点缩小到10纳米节点以上时，也会导致显著的器件退化。特别是，由于翅片宽度的有限体积和簇缺陷的大小相当，在6纳米以下节点可能会出现异常变化。
The variability due to the displacement damage defect is investigated for various bulk FinFET technology nodes. A random displacement damage from point to clustered defects is introduced by natural terrestrial radiation in arbitrary locations in the silicon channel region. Energy level, position, and size of the defect clusters are considered as variables, and the impact on device performance is investigated for various technology nodes with the aid of the TCAD simulation. It is found that even a displacement defect can cause significant device degradation as the technology node scales down beyond the 10-nm node. Particularly, the abnormal variability may become an issue at sub-6-nm node due to a limited volume of the fin width and the comparable size of the cluster defect.