A comparison of the kink effect in polysilicon thin film transistors and silicon on insulator transistors
A comparison of the kink effect in polysilicon thin film transistors and silicon on insulator transistors
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DOI：
10.1016/0038-1101(96)00030-5
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发表时间：
1996-09-01
影响因子：
1.7
通讯作者：
Ayres, JR
中科院分区：
文献类型：
--
作者：
Armstrong, GA;Brotherton, SD;Ayres, JR
多晶硅薄膜晶体管（TFT）与传统的绝缘体上硅（SOI）晶体管的不同之处在于，TFT表现出输出特性中出现扭结的电压的基本栅极长度依赖性。这种差异被证明是由峰值横向电场强烈依赖于SOI晶体管中的掺杂密度，但相对不敏感的TFT中的陷阱分布。在SOI晶体管中发生的源极势垒降低在TFT中不存在，其中电流的增加是沿沟道沿着保持的再分布的结果。对于非常短的栅极长度，TFT表现出小的伪双极增益。可以通过模拟有和没有碰撞电离的TFT特性来估计该双极增益。增益的大小被示出为近似与栅极长度成反比。版权所有（C）1996 Elsevier Science Ltd
Polysilicon thin film transistors (TFTs) differ from conventional silicon on insulator (SOI) transistors in that the TFT exhibits a fundamental gate length dependence of the voltage at which a kink occurs in the output characteristics. This difference is shown to be caused by the peak lateral electric field being strongly dependent on the doping density in an SOI transistor, but relatively insensitive to trap distribution in a TFT. Source barrier lowering which occurs in SOI transistors is absent in a TFT, where the increase in current is the result of a held redistribution along the channel. For very short gate lengths, the TFT exhibits a small pseudo-bipolar gain. Estimates of this bipolar gain can be made by simulation of TFT characteristics with and without impact ionisation. The magnitude of the gain is shown to be approximately inversely proportional to gate length. Copyright (C) 1996 Elsevier Science Ltd