Depth profiles of defects in CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100)
Depth profiles of defects in CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100)
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GaAs(100) 上分子束外延生长的 CdTe(100) 覆盖层缺陷深度分布
DOI：
10.1063/1.98780
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发表时间：
1987
期刊：
影响因子：
--
通讯作者：
M. Pessa
中科院分区：
文献类型：
--
作者：
E. Rauhala;J. Keinonen;K. Rakennus;M. Pessa
通过 X 射线衍射和卢瑟福背散射/沟道方法研究了在 GaAs(100) 衬底上通过分子束外延生长的 CdTe(100) 覆盖层的晶体结构质量。厚度为 1.6 至 3.1 μm 的覆盖层中位移原子的深度分布表明，当薄膜厚度约为 2 μm 时，可以获得无缺陷的表面。
The quality of crystal structure of CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100) substrates has been studied by x‐ray diffraction and Rutherford backscattering/channeling methods. The depth distribution of displaced atoms in the overlayers with thicknesses varying from 1.6 to 3.1 μm shows that a defect‐free surface is obtained when the film thickness is about 2 μm.