All-Solution-Processed Inverted Quantum-Dot Light-Emitting Diodes
All-Solution-Processed Inverted Quantum-Dot Light-Emitting Diodes
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DOI：
10.1021/am404876p
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发表时间：
2014-02-26
影响因子：
9.5
通讯作者：
Jang, Jin
中科院分区：
文献类型：
--
作者：
Castan, Alice;Kim, Hyo-Min;Jang, Jin
量子点是一种很有前途的新型发光材料，可作为显示用发光器件的发光材料。通过溶液工艺制造这种器件可以大大降低成本，因此对工业制造商非常有吸引力。我们报道了所有溶液处理的具有倒置结构的胶体量子点发光二极管(QLED)。红色、绿色和蓝色器件的最大亮度分别为12510、32370和249cd/m(2)，开启电压分别为2.8V、3.6V和3.6V。我们研究了在空穴注入层(HIL)中添加表面活性剂的效果，目的是促进层沉积，从而提高器件性能。我们证明，在本研究提出的器件结构中，在HIL中加入少量的表面活性剂可以显著提高QLED的性能。
Quantum dots are a promising new candidate for the emissive material in light-emitting devices for display applications. The fabrication of such devices by solution processing allows considerable cost reduction and is therefore very attractive for industrial manufacturers. We report all solution-processed colloidal quantum-dot light-emitting diodes (QLEDs) with an inverted structure. The red, green, and blue devices showed maximum luminances of 12510, 32 370, and 249 cd/m(2) and turn-on voltages of 2.8, 3.6, and 3.6 V, respectively. We investigate the effect of a surfactant addition in the hole injection layer (HIL), with the aim of facilitating layer deposition and thereby enhancing device performance. We demonstrate that in the device structure presented in this study, a small amount of surfactant in the HIL can significantly improve the performance of the QLED.