Stark Tuning of the Silicon Vacancy in Silicon Carbide
Stark Tuning of the Silicon Vacancy in Silicon Carbide
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DOI：
10.1021/acs.nanolett.9b04419
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发表时间：
2020-01-01
期刊：
影响因子：
10.8
通讯作者：
Weber, Heiko B.
中科院分区：
文献类型：
--
作者：
Ruehl, Maximilian;Bergmann, Lena;Weber, Heiko B.
我们提出了一个多功能的计划，致力于施加强电场高达0.5 MV/cm的六方碳化硅的色心，采用透明的外延石墨烯电极。在轴向和基底方向上，可以选择性地控制相等强的电场。在系综光致发光实验中研究了硅空位（V-Si），我们报道了3 meV的V1'线在基场作用下的Stark分裂和1 meV的V1线在轴向电场作用下的Stark位移。作为实现量子网络的重要候选者，V-Si的光谱微调为真正不可区分的单光子源铺平了道路。
We present a versatile scheme dedicated to exerting strong electric fields up to 0.5 MV/cm on color centers in hexagonal silicon carbide, employing transparent epitaxial graphene electrodes. In both the axial and basal direction equally strong electric fields can be selectively controlled. Investigating the silicon vacancy (V-Si) in ensemble photoluminescence experiments, we report Stark splitting of the V1' line of 3 meV by a basal electrical field and a Stark shift of the V1 line of 1 meV in an axial electric field. The spectral fine-tuning of the V-Si, being an important candidate for realizing quantum networks, paves the way for truly indistinguishable single-photon sources.