Electronic structure of K-intercalated 8-tris-hydroxyquinoline aluminum studied by photoemission spectroscopy
Electronic structure of K-intercalated 8-tris-hydroxyquinoline aluminum studied by photoemission spectroscopy
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DOI：
10.1103/physrevb.63.165104
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发表时间：
2001-04-15
影响因子：
3.7
通讯作者：
Fink, J
中科院分区：
文献类型：
--
作者：
Schwieger, T;Peisert, H;Fink, J
利用价带和芯能级光电子能谱研究了钾插层8-三羟基喹啉铝的电子结构。它示出，低K嵌入导致的化学势的刚性移动到更高的能量。该移位允许确定原始8-三羟基喹啉铝的传输能隙的下限为3.05eV。这个数字是显着大于差距使用吸收技术，表明光激发是激子测量。8-三-羟基喹啉铝的能级被大大修改后，进一步嵌入，这是分配到一个组合的结构弛豫和碱抗衡离子的影响。
We have studied the electronic structure of potassium-intercalated 8-tris-hydroxyquinoline aluminum using valence-band and core-level photoemission spectroscopy. It is shown that low K intercalation leads to a rigid shift of the chemical potential to higher energies. This shift allows the determination of a lower limit of the transport energy gap of pristine 8-tris-hydroxyquinoline aluminum of 3.05 eV. This number is significantly larger than the gap measured using absorption techniques that shows that the optical excitation is excitonic. The energy levels of 8-tris-hydroxyquinoline aluminum are considerably modified upon further intercalation that is assigned to a combination of structural relaxation and the impact of the alkali counter ions.