Liquid-gated electric-double-layer transistor on layered metal dichalcogenide, SnS2
Liquid-gated electric-double-layer transistor on layered metal dichalcogenide, SnS2
复制标题
DOI：
10.1063/1.3535613
复制
发表时间：
2011-01
影响因子：
4
通讯作者：
Hongtao Yuan;M. Toh;K. Morimoto;W. L. Tan;F. Wei;H. Shimotani;C. Kloc;Y. Iwasa
中科院分区：
文献类型：
--
作者：
Hongtao Yuan;M. Toh;K. Morimoto;W. L. Tan;F. Wei;H. Shimotani;C. Kloc;Y. Iwasa
在电双层晶体管（EDLT）中使用离子液体（IL）门控，我们报道了SnS2层状材料的场效应操作和电子状态调制，证明了EDLT适用于修饰金属二硫族化合物的电子性质。il门控SnS2 edlt使我们能够实现高性能晶体管操作，并实现高达5.4×1014 cm−2的界面载流子积累水平，如霍尔效应定量估计的那样。在温度相关的薄片电阻中，活化能的显著降低表明，液体门控是调节金属二硫族化合物在EDL界面上的电子态的有效方法。
With ionic liquid (IL) gating in electric-double-layer transistors (EDLTs), we report field effect operation and electronic state modulation in a layered material of SnS2, demonstrating that the EDLT is applicable to modifying the electronic properties of metal dichalcogenides. The IL-gated SnS2 EDLTs allow us to realize high performance transistor operation and to achieve interfacial carrier accumulation to a level as high as 5.4×1014 cm−2, as quantitatively estimated from the Hall effect. A considerable decrease of the activation energy in temperature-dependent sheet resistance implies that liquid gating is an effective way to tune the electronic states of metal dichalcogenides at EDL interfaces.