Current transport mechanisms of InGaN metal-insulator-semiconductor photodetectors
Current transport mechanisms of InGaN metal-insulator-semiconductor photodetectors
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DOI：
10.1116/1.3622298
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发表时间：
2011-08
期刊：
影响因子：
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通讯作者：
Z. Shao;Dunjun Chen;B. Liu;Hai Lu;Z. Xie;Rong Zhang;Youdou Zheng
中科院分区：
文献类型：
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作者：
Z. Shao;Dunjun Chen;B. Liu;Hai Lu;Z. Xie;Rong Zhang;Youdou Zheng
作者报道了InGaN金属-绝缘体-半导体（MIS）光电探测器，其具有分别通过等离子体增强化学气相沉积和原子层沉积沉积的Si 3 N4和Al 2 O3两种不同的绝缘层。光响应光谱表明，金属-Al 2 O3-InGaN光电探测器表现出约3倍高的光电响应度和更大的光谱抑制比相比，金属-Si 3 N4-InGaN光电探测器在1 V的反向偏压。研究了MIS光电探测器中的电流传输机制，以确定光响应的差异。结果表明，空间电荷限制电流是InGaN MIS光电探测器的主要漏导机制，但这种机制是由金属-Si_3 N_4-InGaN光电探测器中的指数陷阱分布所介导的。这表明在Si 3 N4块体中陷阱态的密度较高。在金属-Si_3N_4-InGaN光电探测器中观察到双向Fowler-Nordheim隧穿效应。
The authors report on InGaN metal-insulator-semiconductor (MIS) photodetectors with two different insulating layers of Si3N4 and Al2O3 deposited via plasma-enhanced chemical vapor deposition and atomic layer deposition, respectively. The photoresponse spectra show that the metal-Al2O3-InGaN photodetector exhibits an approximately threefold higher photoelectric responsivity and a larger spectral rejection ratio as compared to the metal-Si3N4-InGaN photodetector at a 1 V reverse bias. The current transport mechanisms in MIS photodetectors were investigated in order to determine the difference in photoresponse. The results show that the space charge limited current is a dominant leakage conduction mechanism in the InGaN MIS photodetectors, but this mechanism is mediated by the exponential trap distribution in the metal-Si3N4-InGaN photodetector. This indicates a higher density of trap states in the Si3N4 bulk. A bidirectional Fowler–Nordheim tunneling effect was observed in the metal-Si3N4-InGaN photodetecto...