In situ observations of graphene growth and strong graphene‑nickel interactions by grazing incidence X-ray diffraction

In situ observations of graphene growth and strong graphene‑nickel interactions by grazing incidence X-ray diffraction
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通过掠入射 X 射线衍射原位观察石墨烯生长和强石墨烯与镍的相互作用

DOI:
10.1016/j.diamond.2022.109357
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发表时间:
2022-09
影响因子:
4.1
通讯作者:
Xiaolong Li
Xiaolong Li
中科院分区:
材料科学2区
文献类型:
--
作者:
De-ming Xie;Qun-Fei Zou;Da-Ming Zhu;Tie-Ying Yang;Xing-Min Zhang;Xiaolong Li

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采用原位二维掠入射X射线衍射(GIXRD)研究了以聚甲基丙烯酸甲酯(PMMA)为固态碳源,采用化学气相沉积法在多晶Ni上生长石墨烯的机理。结果表明,石墨烯的形成过程可分为4个阶段:固态碳的石墨化、碳在Ni中的溶解、石墨烯的成核和石墨烯的等温生长,其石墨化机制为金属诱导结晶(MIC)机制。所谓诱导是相互的,即Ni诱导石墨烯的生长,而石墨烯诱导Ni的旋转和重取向。Ni的重取向是Ni(111)的增强。Ni的旋转和重取向与石墨烯的成核同时发生,并在石墨烯的整个生长过程中继续。当石墨烯生长停止时,Ni的旋转结束。进一步分析了引起表面Ni晶格旋转和重取向的力。首次发现晶粒旋转是由碳的定向扩散和石墨烯-Ni相互作用引起的。另外,在生长温度相同的情况下,石墨烯开始生长的时间主要与镍基体有关,而与碳源无关。·PMMA在Ni上的石墨化可用金属诱导晶化机制解释。·分析了引起表面Ni晶格旋转和重取向的力。·石墨烯生长过程中的晶粒旋转是由定向碳扩散和石墨烯-Ni相互作用引起的。·石墨烯开始生长的时间主要与镍基体有关,而与碳源无关。
The growth mechanisms of graphene on polycrystalline Ni by chemical vapor deposition using polymethyl methacrylate (PMMA) as solid-state carbon sources were investigated by in-situ two-dimensional grazing incidence X-ray diffraction (GIXRD). The results show that the formation of graphene can be described by four stages: The graphitization of solid-state carbon, carbon dissolution in Ni, graphene nucleation, and isothermal growth of graphene, suggesting that the graphitization mechanism is metal-induced crystallization (MIC) mechanism. The so-called induction is mutual, that is, Ni induces the growth of graphene, and reciprocally, graphene induces the rotation and reorientation of Ni. The reorientation of Ni is the enhancement of Ni(111). The rotation and reorientation of Ni occur simultaneously with the nucleation of graphene and continue throughout the growth of graphene. The rotation of Ni ends when the graphene growth stops. Further, the forces causing the rotation and reorientation of the surface Ni lattice are analyzed. It was discovered for the first time that grain rotation was caused by directional carbon diffusion and graphene-Ni interaction. In addition, when the growth temperature is the same, the time when graphene starts to grow is mainly related to the nickel matrix but not the carbon source. • The graphitization of PMMA on Ni is explained by metal-induced crystallization mechanism. • The forces causing the rotation and reorientation of the surface Ni lattice are analyzed. • The grain rotation during graphene growth was caused by directional carbon diffusion and graphene-Ni interaction. • The time when graphene starts to grow is mainly related to nickel matrix but not to carbon source.
DOI: 10.1016/j.tsf.2020.138225
发表时间: 2020-09
期刊: Thin Solid Films
影响因子: 2.1
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发表时间: 2013-01-01
期刊: NANOSCALE
影响因子: 6.7
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DOI: 10.1063/1.2828699
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