UV assisted pyrolysis of solution deposited BiFeO3 multiferroic thin films. Effects on microstructure and functional properties
UV assisted pyrolysis of solution deposited BiFeO3 multiferroic thin films. Effects on microstructure and functional properties
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DOI：
10.1007/s10971-006-0201-y
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发表时间：
2007-06
影响因子：
2.5
通讯作者：
S. Habouti;C. Solterbeck;M. Es‐Souni
中科院分区：
文献类型：
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作者：
S. Habouti;C. Solterbeck;M. Es‐Souni
采用化学溶液沉积法在镀铂硅衬底上制备了BiFeO 3薄膜。在氧气气氛中进行短波紫外光辅助热解，以获得细小均匀的晶粒结构。在600°C的较低退火温度下获得了具有明显（100）织构的纯相薄膜。为了比较，还研究了未经UV辅助热解处理的样品。结果表明，紫外辅助热解导致泄漏电阻性能的显着改善。极化切换也可以使用电容-电压（C-V）曲线来获得。漏电流作为温度的函数进行了研究。解释在弗伦克尔-普尔机制导致高陷阱深度的范围内的2.4 eV，这是由于创建的Fe 2+中心。对于这两种微结构的研究以及饱和磁化回路得到的剩余磁化强度为2 Mr = 5.4 emu/cm 3和矫顽场的范围为2 HC = 200 Oe。稍高的饱和磁化强度2 Ms为55.4 emu/cm 3的UV辅助热解得到的相比，45.8 emu/cm 3的薄膜处理没有UV。
BiFeO3thin films were processed on platinized silicon substrate via chemical solution deposition. Short wave UV assisted pyrolysis was conducted in oxygen atmosphere in order to obtain a fine and homogeneous grain structure. Phase pure thin films with a pronounced (100) texture were obtained at a fairly low annealing temperature of 600°C. For comparison specimens processed without UV assisted pyrolysis were also investigated. It is shown that UV assisted pyrolysis leads to a substantial improvement of leakage resistance properties. Polarization switching could also be obtained using capacitance-voltage (C-V) curves. The leakage current was investigated as a function of temperature. Interpretation in terms of Frenkel-Poole mechanism leads to a high trap depth in the range of 2.4 eV which is attributed to the creation of Fe2+centres. For both microstructures investigated well saturated magnetization loops were obtained with a remnant magnetization of 2Mr = 5.4 emu/cm3and a coercive fields in the range of 2Hc = 200 Oe. Slightly higher saturation magnetization 2Ms of 55.4 emu/cm3was obtained for UV assisted pyrolysis in comparison to 45.8 emu/cm3for the thin films processed without UV.