Resistive switching study on diffusive memristors using electrochemical impedance spectroscopy
Resistive switching study on diffusive memristors using electrochemical impedance spectroscopy
复制标题
DOI：
10.1088/1361-6463/acd06c
复制
发表时间：
2023-07-27
影响因子：
3.4
通讯作者：
Borisov，P.
中科院分区：
文献类型：
--
作者：
Gabbitas，A.;Pattnaik，D. P.;Borisov，P.
扩散型忆阻器表现出由纳米银在二氧化硅基质中扩散而提供动力的易失性电阻开关。利用电化学阻抗谱研究了模拟开关和突变开关两种类型器件的高阻状态等效电路。结果表明，在模拟开关器件中，电阻分量与I-V曲线得到的微分电阻具有较好的一致性，而在模拟开关器件中，随着偏置电压的增加，电容明显增加，因为随着偏置电压的增加，模拟开关器件的导电丝开始形成，银纳米粒子开始在顶部电极上重新分布。对于对于偏置电压小幅增加而迅速进入导通状态的突然开关器件来说，没有观察到这样的影响。这种实验方法允许识别记忆器件中的不同类型的电路行为，甚至在阻性开关发生之前。
Diffusive memristors demonstrate volatile resistive switching powered by the diffusion of silver nanoparticles through the matrix of silicon dioxide. The equivalent circuit of the high resistance state has been studied via electrochemical impedance spectroscopy for two types of devices which demonstrate either analog or abrupt switching characteristics. It was found that the resistance component has a relatively good agreement with the differential resistance obtained from the I–V curves, whereas the capacitance visibly increases in the analog switching devices with increasing bias voltage as its conductive precursor filament starts forming with increasing voltage and redistribution of silver nanoparticles starts to occur at the top electrodes. Such an effect is not observed for abrupt switching device, which rapidly enters its conductive state for a small increase in bias voltage. This experimental approach allows for the identification of different types of electrical circuit behaviors in a memristive device, even before resistive switching takes place.