Influence of heavier impurity deposition on surface morphology development and sputtering behavior explored in multiple linear plasma devices
Influence of heavier impurity deposition on surface morphology development and sputtering behavior explored in multiple linear plasma devices
复制标题
在多个线性等离子体装置中探索较重杂质沉积对表面形貌发展和溅射行为的影响
DOI：
10.1016/j.nme.2018.12.008
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发表时间：
2019
影响因子：
2.6
通讯作者：
Doerner R.P.
中科院分区：
文献类型：
--
作者：
Nishijima D.;Kreter A.;Baldwin M.J.;Borodin D.;Eksaeva A.;Hwangbo D.;Kajita S.;Miyamoto M.;Ohno N.;Patino M.;Pospieszczyk A.;Rasinski M.;Schlummer T.;Terra A.;Doerner R.P.
在多个线性等离子体装置PISCES-A、PSI-2和NAGDIS-II中，在低入射离子能量为1.80 eV的He等离子体暴露下，探索了作为测试材料的Cr的表面形貌发展和溅射行为。从这些设备中的实验的比较，沉积少量的较重的杂质（钼NAGDIS-II和钽PISCES-A）到铬上被发现，导致在铬表面上的锥结构的形成，由于优先溅射，导致在一个显着的减少（高达10倍），在溅射产量的铬由于视线再沉积到相邻的锥体。较重的杂质被认为源自样品保持帽/盖，其可以被痕量的本征杂质（C、O等）以及被等离子体中电离的Cr溅射。从Cr实验以及PISCES-B中收集的额外Be数据可以得出结论，较重的杂质沉积在锥结构形成中起主要作用，而其他机制（例如表面不规则性和氧化物）也存在。
Surface morphology development and sputtering behavior of Cr, as a test material, have been explored under He plasma exposure at a low incident ion energy of ∼80 eV in multiple linear plasma devices: PISCES-A, PSI-2, and NAGDIS-II. From comparison of the experiments in these devices, deposition of a small amount of heavier impurities (Mo in NAGDIS-II and Ta in PISCES-A) onto Cr is found to result in the formation of cone structures on the Cr surface due to preferential sputtering, resulting in a significant reduction (up to ∼10 times) in the sputtering yield of Cr due to line-of-sight redeposition onto the neighboring cones. The heavier impurities are thought to originate from a sample holding cap/cover, which can be sputtered by a trace amount of intrinsic impurities (C, O, etc) as well as by Cr ionized in the plasma. It can be concluded from the Cr experiments, as well as additional Be data collected in PISCES-B, that heavier impurity deposition plays a major role in the cone structure formation, while other mechanisms (e.g. surface irregularity and oxide) also exist.