Electrical and Structural Properties of Tin-Doped Indium Oxide Films Deposited by DC Sputtering at Room Temperature
Electrical and Structural Properties of Tin-Doped Indium Oxide Films Deposited by DC Sputtering at Room Temperature
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室温直流溅射沉积的掺锡氧化铟薄膜的电学和结构性能
DOI：
10.1143/jjap.38.2921
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发表时间：
1999
影响因子：
1.5
通讯作者：
I. Yasui
中科院分区：
文献类型：
--
作者：
P. Song;Y. Shigesato;M. Kamei;I. Yasui
采用直流磁控溅射法在无衬底加热的钠钙玻璃基板上制备了掺锡氧化铟（ITO）薄膜。通过X射线衍射和霍尔效应测量研究了薄膜的结晶度和电学性能，结果表明，薄膜的结晶度和电学性能明显依赖于沉积过程中的靶基距离（T-S）和总气压（Ptot）。在相对较高或较低的Ptot下观察到结晶度的退化，其中用于沉积具有高结晶度的膜的较高或较低Ptot水平随着T-S的降低而增加。基于硬球碰撞模型，薄膜的结晶度被认为是强烈的影响溅射在（或锡）粒子的动能和到达生长的薄膜表面的高能粒子的轰击。前者可提高结晶度，而后者则使结晶度和电导率均下降。电性能的这种劣化主要是由于载流子密度的降低。
Tin-doped indium oxide (ITO) films were deposited on soda-lime glass plates without substrate heating by dc magnetron sputtering. Crystallinity and electrical properties of the films were investigated by X-ray diffraction and Hall-effect measurements, which showed clear dependence on target–substrate distance (T–S) and on total gas pressure (Ptot) during deposition. Degradation in crystallinity was observed at relatively high or low Ptot, where the upper or lower Ptot level for depositing films with high crystallinity was increased with decreasing T–S. Based on a hard sphere collision model, the crystallinity of the films was considered to be strongly affected both by the kinetic energy of sputtered In (or Sn) particles and by the bombardment of high energy particles arriving at the growing film surface. The former could enhance the crystallinity, whereas the latter degraded both the crystallinity and conductivity. Such degradation in electrical properties was mainly due to a decrease in carrier density.