Rectifying effect in a MoS2 monolayer crossed with an electro-spun PEDOT-PSS nano-ribbon
Rectifying effect in a MoS2 monolayer crossed with an electro-spun PEDOT-PSS nano-ribbon
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DOI：
10.1007/s42452-019-0595-0
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发表时间：
2019-05
影响因子：
2.6
通讯作者：
Kelotchi S. Figueroa;J. L. Pérez;Ahmad Matar Abed;I. Ramos;N. Pinto;Meng-qiang Zhao;A. T. Johnson
中科院分区：
文献类型：
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作者：
Kelotchi S. Figueroa;J. L. Pérez;Ahmad Matar Abed;I. Ramos;N. Pinto;Meng-qiang Zhao;A. T. Johnson
在环境条件下，化学气相沉积单层 MoS2 晶体与电纺 PEDOT-PSS 纳米带交叉。在异质结上测量的电流-电压 (I-V) 曲线是非线性且不对称的，类似于二极管。在热平衡下，电子从MoS2导带流入PEDOT-PSS LUMO能级。这是通过能带弯曲发生的，在界面上建立了恒定的费米能级。因此，形成了限制电流的势垒。在空气中正常工作时，二极管导通电压为0.1 V，±1 V整流比为20。采用热电子发射肖特基结模型进行数据分析。理想因子为 1.9，势垒高度为 0.18 eV。该二极管易于制造、低导通电压和高整流比，可用于廉价、低功耗的信号整流器。
A chemical vapor-deposited monolayer MoS2crystal was crossed with an electro-spun PEDOT-PSS nano-ribbon under ambient conditions. The current–voltage (I–V) curve measured across the hetero-junction was nonlinear and asymmetric, similar to a diode. Under thermal equilibrium, electrons flowed from the MoS2conduction band into the PEDOT-PSS LUMO level. This occurred via band bending that established a constant Fermi level across the interface. Consequently, a potential barrier was formed that restricted the current. Under normal operation in air, the diode turn-on voltage was 0.1 V and the rectification ratio at ± 1 V was 20. The thermionic emission Schottky junction model was employed for data analysis. The ideality factor was 1.9, and height of the barrier was 0.18 eV. The easy fabrication, low turn-on voltage and high rectification ratio could make this diode useful in cheap, low-power-consumption signal rectifiers.