Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag
Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag
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DOI：
10.1063/1.1591233
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发表时间：
2003-07
影响因子：
4
通讯作者：
D. Hibbard;Sung-Pyo Jung;Chun-Lin Wang;D. Ullery;Y. S. Zhao;H. P. Lee;W. So;H. Liu
中科院分区：
文献类型：
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作者：
D. Hibbard;Sung-Pyo Jung;Chun-Lin Wang;D. Ullery;Y. S. Zhao;H. P. Lee;W. So;H. Liu
我们报告了与 p-GaN 的高反射率低电阻多层接触，该接触由薄的氧化 Ni/Au 双层组成，上面涂有厚的 Al 或 Ag 层，然后用 Ni/Au 覆盖。对直径 500 μm 的发光二极管类测试结构的测量显示，20 mA 时的工作电压低于 4 V，与使用传统 Ni/Au 触点制造的相同器件相当。由于 Al 或 Ag 的光吸收较低，背面光发射比采用 Ni/Au 接触的器件高出约 70%。铝基和银基触点的性能在高达 100 °C 左右的温度下保持稳定。
We report on a high reflectance low resistance multilayer contact to p-GaN composed of a thin oxidized Ni/Au bilayer overcoated with a thick Al or Ag layer and then capped by Ni/Au. Measurements on 500 μm diameter light emitting diode-like test structures show an operating voltage below 4 V at 20 mA that is comparable to identical devices fabricated with a conventional Ni/Au contact. Back surface light emission is about 70% greater than that from devices with the Ni/Au contact due to lower light absorption by the Al or Ag. Performance for both Al and Ag based contacts is stable at temperatures of up to around 100 °C.