FeFET based Logic-in-Memory: an overview
FeFET based Logic-in-Memory: an overview
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基于 FeFET 的内存逻辑：概述
DOI：
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发表时间：
2021
期刊：
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通讯作者：
T. Mikolajick
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文献类型：
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作者：
Cédric Marchand;I. O’Connor;Mayeul Cantan;E. Breyer;S. Slesazeck;T. Mikolajick
新兴的非易失性存储器引起了系统设计界的新兴趣。它们被用来设计存储器中的逻辑电路，并提出冯·纽曼架构的替代方案。与CMOS技术完全兼容的基于氧化铪的铁电存储器技术对于存储器中的逻辑设计特别有趣。实际上，这种兼容性导致存储器应用中的细粒度逻辑的各种可能性，其中具有存储能力的元件与系统中的晶体管紧密集成。物联网和嵌入式人工智能的非易失性和节能计算是该技术的潜在应用之一。在本文中，我们重点关注铁电场效应晶体管（FeFET），并概述了FeFET的三种不同细粒度逻辑存储器可能性：自定义操作设计、可重配置电路和可通过内容或地址访问的混合存储器元件。所有提出的电路已设计在一个测试芯片使用28纳米技术提供的GLOBALFOUNDRIES。
Emerging non-volatile memories are getting new interest in the system design community. They are used to design logic-in-memory circuits and propose alternatives to von-Neuman architectures. Hafnium oxide-based based ferroelectric memory technology, which is fully compatible with CMOS technologies is particularly interesting for logic-in-memory designs. Indeed, this compatibility leads to various possibilities for fine-grain logic in memory applications where the memory capable element is tightly integrated with the transistors in the system. Nonvolatile and energy efficient computing for Internet of things and embedded artificial intelligence are among the potential applications for this technology.In this article, we focus on ferroelectric field-effect transistors (FeFET) and present an overview of three different fine-grain logic-in-memory possibilities with FeFETs: custom operation designs, reconfigurable circuits and a hybrid memory element accessible by content or by address. All presented circuits have been designed within a test chip using 28nm technology provided by GLOBALFOUNDRIES.