Defect reduction in non‐polar (11$ \bar 2 $0) GaN grown on (1$ \bar 1 $02) sapphire
Defect reduction in non‐polar (11$ \bar 2 $0) GaN grown on (1$ \bar 1 $02) sapphire
复制标题
在 (1$ ar 1 $02) 蓝宝石上生长的非极性 (11$ ar 2 $0) GaN 缺陷减少
DOI：
10.1002/pssa.200880788
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
C. Humphreys
中科院分区：
文献类型：
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作者：
C. Johnston;M. Kappers;M. Moram;J. Hollander;C. Humphreys
这项工作评估了用MOVPE技术在r面蓝宝石上生长的异质外延、非极性a面GaN薄膜中降低缺陷密度的不同技术的相对有效性。利用平面图透射电子显微镜测量了不同方法生长的薄膜的缺陷密度。该材料具有较高的位错密度和基面层错密度(分别为1.9(±0.2)×1011 cm-2和1.1(±0.9)×106 cm-1)。测试的四种缺陷减少技术是：3D-2D生长、SiNx中间层、SCN中间层和外延横向过度生长(ELOG)。与生长的材料相比，所有方法都降低了位错密度和BSF密度。ELOG样品(0001)翼部的缺陷密度最低，分别为1×106位错cm~(-2)和2.0(±0.7)×104BSFs·cm~(-1)。在晶片尺度上，SCN中间层最有效：一层5 nm厚的SCN中间层使BSF密度降低到5.9(±0.8)×105 cm~(-1)，位错密度降低两个数量级至1.8(±0.2)×109 cm~(-2)。(2019Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
This work assesses the relative effectiveness of different techniques to reduce defect density in heteroepitaxial, non‐polar, a ‐plane GaN films grown on r ‐plane sapphire by MOVPE. Plan view TEM was used to obtain the defect density of films grown by different methods. The as‐grown material was found to have a high dislocation and basal plane stacking fault (BSF) density (1.9 (± 0.2) × 1011 cm–2 and 1.1 (± 0.9) × 106 cm–1 respectively). The four defect reduction techniques tested were: 3D–2D growth, SiNx interlayers, ScN interlayers and epitaxial lateral overgrowth (ELOG). Both dislocation and BSF density were reduced by all methods compared to the as‐grown material. The lowest defect density was achieved in the (0001) wing of the ELOG sample and was <1 × 106 dislocations cm–2 and 2.0 (± 0.7) × 104 BSFs cm–1. On the wafer scale, ScN interlayers were most effective: A single 5 nm thick ScN interlayer reduced the BSF density to 5.9 (± 0.8) × 105 cm–1 and the dislocation density was reduced by two orders of magnitude to 1.8 (± 0.2) × 109 cm–2 compared to the as‐grown material. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)