High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs
High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs
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在 GaAs 上生长的高稳定性和线性调谐波长可调谐谐振腔增强型光电探测器
DOI：
10.7498/aps.61.018502
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发表时间：
2012-01
影响因子：
1
通讯作者：
Wang Xiu-Ping
中科院分区：
文献类型：
--
作者：
Yang Xiao-Hong;Ni Hai-Qiao;He Ji-Fang;Wang Xiu-Ping
研制了一种波长可调谐的谐振腔增强型光电探测器。采用分子束外延技术生长了In0.2 5 Ga0.75As/GaAs激活区量子阱。工作偏置为0的响应谱峰位于1071 nm处。当调谐电压从0V上升到21V时，峰值蓝移23 nm，达到1048 nm。统计结果表明，调谐电压与响应峰值之间存在稳定、准确的对应关系。当调谐电压大于5V时，该关系近似为线性关系，并对测试结果进行了理论分析。
A wavelength tunable resonant cavity enhanced photo-detector grown on GaAs is fabricated. The quantum wells of In 0.25 Ga 0.75 As/GaAs in the active region are grown by molecular beam epitaxy. The peak of the response spectrum at 0 work bias is located at 1071 nm. When the tuning voltage rises from 0 V to 21 V, the peak shows a blue shift of 23 nm, reaching 1048 nm. Statistical results show that there is a stable accurate corresponding relation between the tuning voltage and the response peak. The relation is approximately linear when the tuning voltage is greater than 5 V. Some theoretical analysis is performed on the test results.