Load-modulated GaN power amplifier implementing tunable thick film BST components
Load-modulated GaN power amplifier implementing tunable thick film BST components
复制标题
采用可调谐厚膜 BST 组件的负载调制 GaN 功率放大器
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
G. Boeck
中科院分区：
文献类型：
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作者：
M. T. Arnous;A. Wiens;S. Preis;H. Maune;K. Bathich;Mohmmad Nikfalazar;R. Jakoby;G. Boeck
提出了一种基于钛酸锶钡（BST）动态负载调制（DLM）的自适应宽带功率放大器（PA）设计。所设计的功率放大器，在C类驱动，利用商业GaN HEMT，并打算工作在1.8-2.2 GHz的最大输出功率为43 dBm的最大输出功率电平与高效率一起。在回退输出功率操作时，基于可调谐BST的输出匹配网络引入了最佳负载阻抗以实现高效率。基于厚膜BST变容管的π结构匹配拓扑实现了频率和输入功率相关的阻抗可调谐性，该变容管具有高于500 V的非常高的击穿电压。
In this work, a novel adaptive broadband power amplifier (PA) design based on barium-strontium-titanate (BST) components for dynamic load modulation (DLM) is presented. The designed PA, driven in class C, makes use of a commercial GaN HEMT, and is intended to operate over 1.8-2.2 GHz with maximum output power of 43 dBm together with high efficiency at maximum output power level. At back-off output power operation, the tunable BST-based output matching network introduces the optimum load impedance for high efficiency. The frequency and input power dependent impedance tunability is realized using a π-structure matching topology based on thick film BST varactors which have a very high breakdown voltage of higher than 500 V.