Time-Resolved Photoluminescence Study of Si/β-FeSi2/Si Structures Grown by Molecular Beam Epitaxy
Time-Resolved Photoluminescence Study of Si/β-FeSi2/Si Structures Grown by Molecular Beam Epitaxy
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分子束外延生长的 Si/β-FeSi2/Si 结构的时间分辨光致发光研究
DOI：
10.1143/jjap.43.l930
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发表时间：
2004
影响因子：
1.5
通讯作者：
F. Hasegawa
中科院分区：
文献类型：
--
作者：
T. Suemasu;M. Takauji;Cheng Li;Y. Ozawa;M. Ichida;F. Hasegawa
通过反应沉积外延 (RDE) 和分子束外延 (MBE) 生长 Si/β-FeSi2 颗粒/Si(001) 和 Si/β-FeSi2 薄膜/Si(111) 结构，并在 8 K 至 150 K 范围内测量时间分辨光致发光 (PL)。两个样品在低温下表现出相同的 PL 峰值波长 1.54 µm，但 PL 衰减时间为 1.54 µm 发射不同，表明发光源不同。研究发现，低温下 Si/β-FeSi2 颗粒/Si(001) 的衰减时间较短（τ∼10 ns）。相比之下，Si/β-FeSi2 薄膜/Si(111) 的衰减曲线通过假设双组分模型得到了很好的拟合，具有短衰减时间（τ∼10 ns）和长衰减时间（τ∼100 ns）。
Si/β-FeSi2 particles/Si(001) and Si/β-FeSi2 film/Si(111) structures were grown by reactive deposition epitaxy (RDE) and by molecular beam epitaxy (MBE), and time-resolved photoluminescence (PL) was measured from 8 K to 150 K. Both samples exhibited the same PL peak wavelength of 1.54 µm at low temperatures, but the PL decay time of 1.54 µm emission was different, showing that the luminescence originated from different sources. A short decay time (τ∼10 ns) was found to be dominant for the Si/β-FeSi2 particles/Si(001) at low temperatures. In contrast, the decay curve of the Si/β-FeSi2 film/Si(111) was well fitted by assuming a two-component model, with a short decay time (τ∼10 ns) and a long decay time (τ∼100 ns).