Surface-Assisted Synthesis of Microscale Hexagonal Plates and Flower-like Patterns of Single-Crystalline Titanium Disulfide and Their Field-Emission Properties
Surface-Assisted Synthesis of Microscale Hexagonal Plates and Flower-like Patterns of Single-Crystalline Titanium Disulfide and Their Field-Emission Properties
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DOI：
10.1021/cg800113n
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发表时间：
2008-07
影响因子：
3.8
通讯作者：
Y. Tao;Xingcai Wu;Yu-ling Zhang;Lin Dong;Jun‐Jie Zhu;Zheng Hu
中科院分区：
文献类型：
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作者：
Y. Tao;Xingcai Wu;Yu-ling Zhang;Lin Dong;Jun‐Jie Zhu;Zheng Hu
采用表面辅助化学气相输运法在550 °C下在Ti衬底上生长了边长约7.8 μm、厚度约156 nm的六方片状TiS 2单晶。当反应温度为650 - 750 °C时，TiS 2板（花瓣）和Ti颗粒（花中心）构成花状图案。当反应温度达到850 °C时，Ti箔的表面完全转化为厚度为100 - 400 nm的TiS 2微片。并对其生长机理进行了初步探讨。使用在550、650和850 °C下获得的样品作为冷电子阴极的初步场发射实验表明，材料具有显著的发射电流，并且它们的开启场（定义为产生10 μA/cm 2的电流密度所需的电场）分别为11.5、16.3和19.5 V/μm，这表明它们在电子发射器件中的潜在应用。
Microscale hexagonal plates of single-crystalline TiS2 with a border length of about 7.8 μm and thickness of about 156 nm were grown on Ti substrate by a facile surface-assisted chemical-vapor-transport approach at 550 °C. The TiS2 plates (petals) and Ti particles (flower center) constituted flower-like patterns when the reaction temperature was at 650−750 °C. The surface of the Ti foils was completely converted into TiS2 microplates with a thickness of 100−400 nm when the reaction temperature reached 850 °C. The growth mechanism was briefly discussed. Preliminary field-emission experiments using the samples obtained at 550, 650, and 850 °C as cold electron cathodes showed that the materials have a notable emission current, and their turn-on fields, defined as the electric field required to produce a current density of 10 μA/cm2, are 11.5, 16.3, and 19.5 V/μm, respectively, suggesting their potential application in electron emission devices.