Effects of dielectric material and linewidth on thermal stresses of Cu line structures
Effects of dielectric material and linewidth on thermal stresses of Cu line structures
复制标题
介电材料和线宽对铜线结构热应力的影响
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
P. Ho
中科院分区：
文献类型：
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作者：
Dongwen Gan;Guotao Wang;P. Ho
使用 X 射线衍射测量了与氟化硅氧化物 SiOF 和两种低 k 电介质（碳掺杂氧化物 CDO 和有机聚合物 SiLK/spl trade/）集成的 0.4 和 0.2 /spl mu/m 线宽的 Cu 线结构的热应力。进行有限元分析以评估铜线的应力行为并检查线宽缩放的影响。在用测量的铜线应力进行验证后，有限元分析被扩展以评估低 k 电介质的应力行为。比较和讨论了铜线上低 k 电介质和电介质上铜线对热应力的限制效应。
Thermal stresses of Cu line structures of 0.4 and 0.2 /spl mu/m linewidth integrated with fluorinated silicon oxide SiOF and two kinds of low k dielectrics, carbon doped oxide CDO and organic polymer SiLK/spl trade/, were measured using x-ray diffraction. Finite element analysis was performed to evaluate the stress behavior of the Cu lines and to examine the effect of scaling in linewidth. After verification with the measured Cu line stresses, FEA was extended to evaluate the stress behavior of the low k dielectrics. The confinement effects on thermal stresses due to low k dielectric on Cu lines and Cu lines on the dielectric are compared and discussed.