Ferromagnetic Interfacial Interaction and the Proximity Effect in a Co2FeAl/(Ga,Mn)As Bilayer
Ferromagnetic Interfacial Interaction and the Proximity Effect in a Co2FeAl/(Ga,Mn)As Bilayer
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Co2FeAl/(Ga,Mn)As 双层中的铁磁界面相互作用和邻近效应
DOI：
10.1103/physrevlett.111.027203
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发表时间：
2013-07-09
影响因子：
8.6
通讯作者：
Zhao, J. H.
中科院分区：
文献类型：
--
作者：
Nie, S. H.;Chin, Y. Y.;Zhao, J. H.
对 GaAs (001) 上外延的 Co2FeAl/(Ga,Mn)As 双层的磁性能进行了实验和理论研究。与大多数铁磁-磁性半导体双层中存在的常见反铁磁界面相互作用不同，通过磁滞和 X 射线磁圆二色性的测量观察到 Co2FeAl/(Ga,Mn)As 双层中的铁磁界面相互作用。由于磁邻近效应，1.36 nm 厚的 (Ga,Mn) As 层中的 Mn 离子在高达 400 K 的温度下仍保持自旋极化。 Co2FeAl/(Ga,Mn)As 双层的小环在 15 K 时随着 +24 Oe 和 -23 Oe 的小铁磁相互作用场发生位移。从头算密度泛函计算支持观察到的铁磁界面耦合。这些发现可能为通过磁邻近效应设计室温半导体自旋电子器件提供可行的途径。
The magnetic properties of a Co2FeAl/(Ga,Mn)As bilayer epitaxied on GaAs (001) are studied both experimentally and theoretically. Unlike the common antiferromagnetic interfacial interaction existing in most ferromagnet-magnetic semiconductor bilayers, a ferromagnetic interfacial interaction in the Co2FeAl/(Ga,Mn)As bilayer is observed from measurements of magnetic hysteresis and x-ray magnetic circular dichroism. The Mn ions in a 1.36 nm thick (Ga,Mn) As layer remain spin polarized up to 400 K due to the magnetic proximity effect. The minor loops of the Co2FeAl/(Ga,Mn)As bilayer shift with a small ferromagnetic interaction field of +24 Oe and -23 Oe at 15 K. The observed ferromagnetic interfacial coupling is supported by ab initio density functional calculations. These findings may provide a viable pathway for designing room-temperature semiconductor spintronic devices through magnetic proximity effect.