Pulsed laser deposited Ga doped ZnO/SiOx/Si(100) thin films and their field emission behavior
Pulsed laser deposited Ga doped ZnO/SiOx/Si(100) thin films and their field emission behavior
复制标题
DOI：
10.1016/j.solidstatesciences.2011.06.026
复制
发表时间：
2011-09
影响因子：
3.5
通讯作者：
Shashikant D. Shinde;S. Jejurikar;S. S. Patil-S.;D. Joag;S. Date;M. More;S. Kaimal;T. Shripathi;K. Adhi
中科院分区：
文献类型：
--
作者：
Shashikant D. Shinde;S. Jejurikar;S. S. Patil-S.;D. Joag;S. Date;M. More;S. Kaimal;T. Shripathi;K. Adhi
