High-density and Low-roughness Anodic Oxide Formed on SiC in Highly Concentrated LiCl Aqueous Solution
High-density and Low-roughness Anodic Oxide Formed on SiC in Highly Concentrated LiCl Aqueous Solution
复制标题
高浓度 LiCl 水溶液中 SiC 上形成的高密度、低粗糙度阳极氧化物
DOI：
10.1016/j.elecom.2021.107138
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发表时间：
2021
影响因子：
5.4
通讯作者：
Fukami Kazuhiro
中科院分区：
文献类型：
--
作者：
Maeda Yuki;Kitada Atsushi;Murase Kuniaki;Fukami Kazuhiro
碳化硅（SiC）的宽带隙和高载流子迁移率，以及它的物理和化学稳定性，使它成为一种有前途的材料，用于许多应用。这些应用的关键要求之一是在SiC上形成氧化物。然而，阳极氧化产生的氧化物的用途是有限的，因为在通常的稀水溶液中在SiC上形成的阳极氧化物具有低密度和高表面粗糙度。在这里，我们通过关注电解质中自由水的浓度来考虑阳极氧化物形成的一个新参数，使用高浓度水溶液。在浓溶液中，导致氧化物密度降低的析氧被抑制，缺陷部位阳极氧化物的形成速率有效降低，从而降低表面粗糙度。此外，SiC和SiO2之间形成了密度比SiO2高的界面层，缓冲了两者之间的密度差。因此，我们成功地获得了具有相对较高密度和低表面粗糙度的阳极氧化物。本研究为改善碳化硅上形成的阳极氧化物的性能提供了一条新的途径。
The wide bandgap and high carrier mobility of silicon carbide (SiC), as well as its physical and chemical stability, make it a promising material for a number of applications. One of the key requirements for these applications involves oxide formation on SiC. The usefulness of the oxide produced by anodizing is, however, limited since the anodic oxide formed on SiC in the usual dilute aqueous solution has a low density and high surface roughness. Here, we consider a new parameter in anodic oxide formation by focusing on the concentration of free water in the electrolyte, using a highly concentrated aqueous solution. In a concentrated solution, oxygen evolution, which results in a reduction in the density of the oxide, is suppressed, and the rate of formation of anodic oxide at defect sites effectively decreases to reduce the surface roughness. Furthermore, an interfacial layer with a higher density than SiO2is formed between SiC and SiO2, buffering the difference in density between them. As a result, we successfully obtained an anodic oxide with a relatively high density and low surface roughness. This study provides a new approach to improving the properties of the anodic oxide formed on SiC.