The I–V characteristics of InAs/GaAs quantum dot laser
The I–V characteristics of InAs/GaAs quantum dot laser
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DOI:
10.1016/j.physb.2011.06.059
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发表时间:
2011-10
影响因子:
2.8
通讯作者:
Chuanhe Ma;Hai-long Wang;Yan Zhou;Q. Gong;Peng Chen;C. Cao;S. Feng;S. G. Li
中科院分区:
文献类型:
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作者:
Chuanhe Ma;Hai-long Wang;Yan Zhou;Q. Gong;Peng Chen;C. Cao;S. Feng;S. G. Li