Effects of Oxygen and Substrate Temperature on Properties of Amorphous Carbon Films Fabricated by Plasma-Assisted Pulsed Laser Deposition Method
Effects of Oxygen and Substrate Temperature on Properties of Amorphous Carbon Films Fabricated by Plasma-Assisted Pulsed Laser Deposition Method
复制标题
氧气和基体温度对等离子体辅助脉冲激光沉积非晶碳薄膜性能的影响
DOI：
10.1143/jjap.41.4651
复制
发表时间：
2002
影响因子：
1.5
通讯作者：
Kaoru Suzuki
中科院分区：
文献类型：
--
作者：
Tomoyuki Ono;Y. Suda;M. Akazawa;Y. Sakai;Kaoru Suzuki
采用氧射频等离子体辅助脉冲激光沉积(PLD)方法在Si(111)衬底上沉积了非晶碳(a-C)薄膜，氧气压为53 Mpa，衬底温度为室温至480℃。X射线光电子能谱(XPS)分析表明，在氧等离子体PLD中，当TSUB=410°C时，薄膜表面的SP3含量最高可达58%。在此条件下，通过扫描电子显微镜(SEM)和原子力显微镜(AFM)观察薄膜表面形貌。考察了氧等离子体和衬底温度对薄膜性能的影响。
Amorphous carbon (a-C) thin films were deposited on Si (111) substrates by an oxygen RF plasma-assisted pulsed laser deposition (PLD) method at an oxygen pressure of 53 mPa, as well as in vacuum and oxygen gas ambient at 53 mPa for comparison, at substrate temperatures (Tsub) between room temperature and 480°C. An X-ray photoelectron spectroscopy (XPS) analysis showed that the highest sp3 content of the film was 58% in oxygen plasma PLD at Tsub=410°C. Under this condition, the film surface morphology was shown to be quite smooth with a roughness of about 5 nm, by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Effects of the oxygen plasma and the substrate temperature on the film properties were examined.