Ba-ferrite thin film rigid disk for high density perpendicular magnetic recording
Ba-ferrite thin film rigid disk for high density perpendicular magnetic recording
复制标题
用于高密度垂直磁记录的钡铁氧体薄膜硬盘
DOI：
10.1109/tmag.1986.1064350
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发表时间：
1986
影响因子：
2.1
通讯作者：
M. Naoe
中科院分区：
文献类型：
--
作者：
A. Morisako;M. Matsumoto;M. Naoe
利用传统的射频二极管溅射系统制备了磁铅石型六方Ba铁氧体薄膜，其晶体的c轴良好地垂直于薄膜平面取向。溅射Ba铁氧体薄膜的形态和晶体学特征在很大程度上取决于制备条件，例如靶材和基底之间的距离d T-S 以及沉积期间氧气PO2的分压。在低 P O2 区域的扩展 d T-S 条件下制备了表面光滑的 Ba 铁氧体薄膜。用环形头评估了沉积在半径为两英寸的热氧化硅片上的Ba铁氧体薄膜的读/写特性。 Ba铁氧体薄膜硬盘的记录密度D 50 强烈依赖于Δθ 50 。在这项工作中，对于4.8°和2.8°的Δθ 50 ，分别获得了110和190 kfrpi的D 50 。
A magnetoplumbite type of hexagonal Ba-ferrite films, whose c-axis of crystallites is well oriented perpendicularly to the film plane, have been prepared by means of a conventional rf diode sputtering system. Morphological and crystallographic characteristics of sputtered Ba-ferrite films depend strongly on preparation conditions such as the distance between target and substrate d T-S and partial pressure of oxygen gas P O2 during the deposition. Ba-ferrite films with smooth surface are prepared at the extended d T-S in the region of low P O2 . Read/write characteristics of Ba-ferrite thin film deposited on thermally oxidized silicon wafer with radius of two inches were evaluated with ring type head. Recording density D 50 of Ba-ferrite thin film rigid disk depends strongly on Δθ 50 . In this work, D 50 of 110 and 190 kfrpi for Δθ 50 of 4.8 and 2.8°, respectively, have been attained.