Reversible Doping and Photo Patterning of Polymer Nanowires
Reversible Doping and Photo Patterning of Polymer Nanowires
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DOI：
10.1002/aelm.202000469
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发表时间：
2020-09-13
影响因子：
6.2
通讯作者：
Moule, Adam J.
中科院分区：
文献类型：
--
作者：
Bedolla-Valdez, Zaira I.;Xiao, Rui;Moule, Adam J.
聚合物半导体的掺杂剂诱导的溶解度控制（DISC）图案化的最新发展使得能够以衍射极限分辨率直接写入聚-3-己基噻吩（P3 HT）的光学图案化。在这里，光盘图案化技术应用于最简单的电路元件，导线。展示了P3 HT和掺杂有分子掺杂剂2，3，5，6-四氟-7，7，8，8-四氰基醌二甲烷（F4 TCNQ）的P3 HT线的光学图案化，所述线的尺寸为20-70 nm厚、200-900 nm宽和40 μ m长。此外，光学图案化的导线图案，如“L”弯和“T”结，而不改变的直径或厚度的导线在路口被证明。导线本身显示高达0.034 S cm（-1）的电导时，顺序掺杂。它还表明，P3 HT纳米线可以掺杂，去掺杂，并从溶液中重新掺杂，而不改变线的尺寸。光学图案化和可逆掺杂聚合物半导体的组合能力代表了一整套等同于无机半导体光刻的图案化步骤。
Recent development of dopant induced solubility control (DISC) patterning of polymer semiconductors has enabled direct-write optical patterning of poly-3-hexylthiophene (P3HT) with diffraction limited resolution. Here, the optical DISC patterning technique to the most simple circuit element, a wire, is applied. Optical patterning of P3HT and P3HT doped with the molecular dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) wires with dimensions of 20-70 nm thickness, 200-900 nm width, and 40 mu m length is demonstrated. In addition, optical patterning of wire patterns like "L" bends and "T" junctions without changing the diameter or thickness of the wires at the junctions is demonstrated. The wires themselves show up to 0.034 S cm(-1)conductance when sequentially doped. It is also demonstrated that a P3HT nanowire can be doped, de-doped, and re-doped from solution without changing the dimension of the wire. The combined abilities to optically pattern and reversibly dope a polymer semiconductor represents a full suite of patterning steps equivalent to photolithography for inorganic semiconductors.