Relaxation of photoinjected spins during drift transport in GaAs
Relaxation of photoinjected spins during drift transport in GaAs
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DOI：
10.1063/1.1512818
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发表时间：
2002-10-07
影响因子：
4
通讯作者：
Ohno, H
中科院分区：
文献类型：
--
作者：
Sanada, H;Arata, I;Ohno, H
我们用时间分辨光致发光测量方法研究了光致自旋在GaAs中的输运。在低温下，漂移输运后4微米的自旋极化随外加电场E的增加而减小，当外加电场E超过3kV/cm时，自旋极化消失。讨论了依赖于场的自旋弛豫的起源。(C)2002年美国物理研究所。
We studied the transport of photoinjected spins in GaAs by time-resolved photoluminescence measurements. At low temperatures, the spin polarization after drift transport of 4 mum is found to decrease as the applied electric field E increases to a few kV/cm, and it disappears when E exceeds 3 kV/cm. The origin of the field-dependent spin relaxation is discussed. (C) 2002 American Institute of Physics.