Simulation study of Ge/Si heterostructure solar cells yielding improved open-circuit voltage and quantum efficiency
Simulation study of Ge/Si heterostructure solar cells yielding improved open-circuit voltage and quantum efficiency
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DOI：
10.7567/jjap.53.110312
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发表时间：
2014-11
影响因子：
1.5
通讯作者：
T. Tayagaki;Yuko Kishimoto;Y. Hoshi;I. Takahashi;N. Usami
中科院分区：
文献类型：
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作者：
T. Tayagaki;Yuko Kishimoto;Y. Hoshi;I. Takahashi;N. Usami
采用一个简单的p-Si/Si 1 −xGex/n-Si模型，在Si 1 −xGex层进行载流子复合，数值研究了具有II型Ge/Si异质结构的晶体Si太阳能电池的性能。通过对开路电压（Voc）的分析，我们发现Si 1 −xGex层的载流子复合主导了太阳能电池的性能，因此进一步抑制这种行为是提高Voc的关键。此外，我们还讨论了提高Voc和量子效率所需的器件结构，并发现薄的p-Si层应位于前侧，以提高可见光区的量子效率。
The performance of crystalline Si solar cells with type-II Ge/Si heterostructures is numerically investigated using a simple p-Si/Si1−xGex/n-Si model with carrier recombination at the Si1−xGex layer. From an analysis of the open-circuit voltage (Voc), we find that carrier recombination at the Si1−xGex layer dominates the solar cell performance, and further suppression of this behavior is therefore the key to improving Voc. Furthermore, we discuss the device structure required to improve Voc and the quantum efficiency and find that the thin p-Si layer should be located on the front side to improve quantum efficiency in the visible region.