Peak Position Control of Coulomb Blockade Oscillations in Silicon Single-Electron Transistors with Floating Gate Operating at Room Temperature
Peak Position Control of Coulomb Blockade Oscillations in Silicon Single-Electron Transistors with Floating Gate Operating at Room Temperature
复制标题
室温下浮栅硅单电子晶体管库仑封锁振荡的峰值位置控制
DOI：
10.7567/jjap.53.04ej08
复制
发表时间：
2014
影响因子：
1.5
通讯作者：
Toshiro Hiramoto
中科院分区：
文献类型：
--
作者：
Yuma Tanahashi;Ryota Suzuki;Takuya Saraya;Toshiro Hiramoto
