Quantification of the quantum efficiency of radiation of a freestanding GaN crystal placed outside an integrating sphere
Quantification of the quantum efficiency of radiation of a freestanding GaN crystal placed outside an integrating sphere
复制标题
放置在积分球外部的独立式 GaN 晶体的辐射量子效率的量化
DOI：
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发表时间：
2019
影响因子：
2.3
通讯作者：
S. Chichibu
中科院分区：
文献类型：
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作者：
K. Kojima;K. Ikemura;S. Chichibu
Kojima等人[J. Appl. Phys. 120，015704（2016）]通过使用改进的全向光致发光（ODPL）光谱法显示独立GaN晶体的数据，证明了量化积分球（π-配置）外部凝聚物质辐射的内量子效率（IQE）的理想方法。晶体通过在球体上制造的针孔与球体光学耦合，并且因此具有双折射配置的ODPL给出IQE，因为晶体的光逃逸锥由于大的吸收和晶体厚度而限定了可观察到的光致发光。这种非破坏性ODPL配置适用于大尺寸晶体或半导体晶片。
An ideal method to quantify the internal quantum efficiency (IQE) of radiation for condensed-matter placed outside an integrating sphere (ϕ-configuration) is demonstrated by showing the data for a freestanding GaN crystal using improved omnidirectional photoluminescence (ODPL) spectroscopy, Kojima et al. [J. Appl. Phys. 120, 015704 (2016)]. The crystal is optically coupled with the sphere through a pinhole fabricated on the sphere, and thus ODPL with ϕ-configuration gives IQE because the light-escaping cone for the crystal defines the observable photoluminescence owing to the large absorption and crystal thickness. This nondestructive ODPL configuration is applicable to large size crystals or semiconductor wafers.