Feedback induced instabilities in a quantum dot semiconductor laser.

Feedback induced instabilities in a quantum dot semiconductor laser.
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反馈引起量子点半导体激光器的不稳定性。

DOI:
10.1364/oe.14.010831
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发表时间:
2006
期刊:
影响因子:
3.8
通讯作者:
P. Mandel
P. Mandel
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
O. Carroll;I. O'Driscoll;S. Hegarty;G. Huyet;J. Houlihan;E. Viktorov;P. Mandel

文献摘要

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相似文献

分析了GaAs基量子点半导体激光器在1310 nm附近的发光特性。线宽增强因子强烈依赖于器件温度,范围从20摄氏度时的1.5到50摄氏度时的5。通过来自远处反射器的光学反馈,设备在20摄氏度时保持稳定,但在50摄氏度时显示出一系列不稳定性,包括不规则的功率下降和周期性脉动,然后进入混沌状态。这样的动力学特征是量子点激光器所独有的--量子阱激光器在光反馈下明显更不稳定,使得这种通往混沌的清晰路线难以观察。
We analyse the properties of GaAs based quantum dot semiconductor lasers emitting near 1310 nm. The line-width enhancement factor is shown to depend strongly on device temperature, ranging from 1.5 at 20 degrees C to 5 at 50 degrees C. With optical feedback from a distant reflector, devices remained stable at 20 degrees C but displayed a range of instabilities at 50 degrees C, including irregular power drop--outs and periodic pulsations, before entering a chaotic regime. Such dynamical features are unique to quantum dot lasers -- quantum well lasers are significantly more unstable under optical feedback making such a clear route to chaos difficult to observe.