Feedback induced instabilities in a quantum dot semiconductor laser.
Feedback induced instabilities in a quantum dot semiconductor laser.
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反馈引起量子点半导体激光器的不稳定性。
DOI:
10.1364/oe.14.010831
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发表时间:
2006
期刊:
影响因子:
3.8
通讯作者:
P. Mandel
中科院分区:
文献类型:
--
作者:
O. Carroll;I. O'Driscoll;S. Hegarty;G. Huyet;J. Houlihan;E. Viktorov;P. Mandel
We analyse the properties of GaAs based quantum dot semiconductor lasers emitting near 1310 nm. The line-width enhancement factor is shown to depend strongly on device temperature, ranging from 1.5 at 20 degrees C to 5 at 50 degrees C. With optical feedback from a distant reflector, devices remained stable at 20 degrees C but displayed a range of instabilities at 50 degrees C, including irregular power drop--outs and periodic pulsations, before entering a chaotic regime. Such dynamical features are unique to quantum dot lasers -- quantum well lasers are significantly more unstable under optical feedback making such a clear route to chaos difficult to observe.