Dynamic manipulation and separation of individual semiconducting and metallic nanowires
Dynamic manipulation and separation of individual semiconducting and metallic nanowires
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DOI：
10.1038/nphoton.2007.277
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发表时间：
2008-02-01
期刊：
影响因子：
35
通讯作者：
Wu, Ming C.
中科院分区：
文献类型：
--
作者：
Jamshidi, Arash;Pauzauskie, Peter J.;Wu, Ming C.
纳米线的合成在过去的十年中已经发展到这样的程度，其中大量的绝缘，半导体和金属材料（1）可用于纳米尺度的集成异质光电器件（2）。然而，一个持续的挑战一直是一个通用的策略的发展与任意组成的个别纳米线的操作。在这里，我们报告了直径低于20 nm的单个半导体和金属纳米线可以通过光电镊子产生的力来寻址（3）。使用比光镊小100，000倍的光功率密度，光电镊能够以比光镊实现的最大速度大四倍的速度传输单个纳米线。一个实时阵列的银纳米线形成的使用martatterned虚拟电极，展示了大规模并行组件的潜力。此外，光电子镊子能够分离半导体和金属纳米线，这表明了一维纳米材料的分离和异质集成的广泛应用。
The synthesis of nanowires has advanced in the past decade to the point where a vast range of insulating, semiconducting and metallic materials(1) are available for use in integrated, heterogeneous optoelectronic devices at nanometre scales(2). However, a persistent challenge has been the development of a general strategy for the manipulation of individual nanowires with arbitrary composition. Here we report that individual semiconducting and metallic nanowires with diameters below 20 nm are addressable with forces generated by optoelectronic tweezers(3). Using 100,000 times less optical power density than optical tweezers, optoelectronic tweezers are capable of transporting individual nanowires with speeds four times greater than the maximum speeds achieved by optical tweezers. A real-time array of silver nanowires is formed using photopatterned virtual electrodes, demonstrating the potential for massively parallel assemblies. Furthermore, optoelectronic tweezers enable the separation of semiconducting and metallic nanowires, suggesting a broad range of applications for the separation and heterogeneous integration of one-dimensional nanoscale materials.