Revealing shear-coupled migration mechanism of a mixed tilt-twist grain boundary at atomic scale
Revealing shear-coupled migration mechanism of a mixed tilt-twist grain boundary at atomic scale
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DOI:
10.1016/j.actamat.2023.119237
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发表时间:
2023-08
期刊:
影响因子:
9.4
通讯作者:
Zheng Fang;Boyang Li;Susheng Tan;S. Mao;Guofeng Wang
中科院分区:
文献类型:
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作者:
Zheng Fang;Boyang Li;Susheng Tan;S. Mao;Guofeng Wang
Shear-coupled grain boundary (GB) migration greatly influences the plasticity and creep resistance of nanocrystalline materials. However, the atomistic mechanisms underlying the shear-coupled migration of general mixed tilt-twist GBs (MGBs) remain largely elusive to date. Here, using in-situ high-resolution transmission electron microscopy and molecular dynamics simulations, we uncover the atomic-scale migration behavior of a typical MGB, ie,< 001>{200}/< 0 1¯ 1>{1¯ 11} GB, during the room-temperature shear deformation of Au nano-bicrystals. Two distinct migration patterns showing the opposite signs of shear-coupling factor were observed and further revealed to be mediated by the motion of GB disconnections with different crystallographic parameters and exhibit different lattice correspondence relations, ie,< 001>{020}-to-< 0 1¯ 1>{200} and< 001>{020}-to-< 0 1¯ 1>{111}. Simulation results confirm that the two distinct migration patterns could be activated under different stress/strain states. Moreover, excess GB sliding and GB plane reorientation were found to accommodate the GB migration in both experiments and simulations, likely due to the necessity of establishing a point-to-point lattice correspondence during GB migration. These findings provide atomic-scale experimental evidence on the disconnection-mediated migration of MGBs and elaborate on the hitherto unreported complex shear response of MGBs, which have valuable implications for optimizing the ductility of metallic nanocrystals through controlling GB migration.