Flash-Sintering of Cubic Yttria-Stabilized Zirconia at 750°C for Possible Use in SOFC Manufacturing
Flash-Sintering of Cubic Yttria-Stabilized Zirconia at 750°C for Possible Use in SOFC Manufacturing
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DOI：
10.1111/j.1551-2916.2010.04267.x
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发表时间：
2011-02-01
影响因子：
3.9
通讯作者：
Raj, Rishi
中科院分区：
文献类型：
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作者：
Cologna, Marco;Prette, Andre L. G.;Raj, Rishi
我们表明，立方8摩尔%的氧化钇（8 YSZ）可以在750摄氏度下烧结与直流电场的应用，相比之下，3 YSZ的最低烧结温度为850摄氏度。此外，立方氧化锆在30 V/cm下开始闪速烧结，而3 YSZ在60 V/cm下开始闪速烧结。然而，闪速烧结开始时的体积比功率耗散保持类似于10 mW/mm 3。8 YSZ的易烧结归因于其较高的离子电导率。
We show that cubic 8 mol% yttria (8YSZ) can be sintered at 750 degrees C with the application of DC electrical fields; in comparison the lowest sintering temperature for 3YSZ was 850 degrees C. Furthermore, cubic zirconia exhibits the onset of flash sintering at 30 V/cm, whereas 3YSZ begins flash sintering at 60 V/cm. However, the volume specific power dissipation for the onset of flash sintering remains similar at similar to 10 mW/mm3. The easier sintering of 8YSZ is ascribed to its higher ionic conductivity.