Ultra-fast scintillation properties of beta-Ga2O3 single crystals grown by Floating Zone method
Ultra-fast scintillation properties of beta-Ga2O3 single crystals grown by Floating Zone method
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浮区法生长β-Ga2O3单晶的超快闪烁特性
DOI：
10.1016/j.nima.2018.01.023
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Ouyang Xiaoping
中科院分区：
文献类型：
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作者：
He Nuotian;Tang Huili;Liu Bo;Zhu Zhichao;Li Qiu;Guo Chao;Gu Mu;Xu Jun;Liu Jinliang;Xu Mengxuan;Chen Liang;Ouyang Xiaoping
本文采用浮区法生长了β-Ga 2 O3单晶.在室温下，X射线激发发射光谱包括紫外和蓝色发射带。闪烁光输出与商业BGO闪烁体相当。闪烁衰减时间由占主导地位的0.368 ns的超快分量和少量的8.2和182 ns的稍慢分量组成。这种快速组分上级大多数商业无机澄清剂。与溶液法制备的ZnO等半导体晶体不同，β-Ga 2 O3单晶可以用传统的熔体法生长。因此，我们可以很容易地获得大块晶体和大规模生产。
In this investigation, β-Ga 2 O 3 single crystals were grown by the Floating Zone method. At room temperature, the X-ray excited emission spectrum includes ultraviolet and blue emission bands. The scintillation light output is comparable to the commercial BGO scintillator. The scintillation decay times are composed of the dominant ultra-fast component of 0.368 ns and a small amount of slightly slow components of 8.2 and 182 ns. Such fast component is superior to most commercial inorganic scintillators. In contrast to most semiconductor crystals prepared by solution method such as ZnO, β-Ga 2 O 3 single crystals can be grown by traditional melt-growth method. Thus we can easily obtain large bulk crystals and mass production.