TECHNIQUES TO MINIMIZE DX CENTER DELETERIOUS EFFECTS IN III-V DEVICE PERFORMANCE
TECHNIQUES TO MINIMIZE DX CENTER DELETERIOUS EFFECTS IN III-V DEVICE PERFORMANCE
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DOI：
10.1063/1.353818
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发表时间：
1993-05-15
影响因子：
3.2
通讯作者：
CASTAGNE, J
中科院分区：
文献类型：
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作者：
MUNOZ, E;CALLEJA, E;CASTAGNE, J
深施主态（DX中心）在III-V合金的性质进行了讨论，在它们对器件特性和性能的影响。讨论了避免或最小化AlGaAs基器件中这种有害效应的技术，沿着它们的物理基础，并建立了改进III-V族器件设计的一些指导方针。新的结果的好处，适当的施主选择，在合金化的作用，在层和调制掺杂器件中的δ掺杂的优势，以及使用AlInAs和InGaP作为替代宽带隙III-V合金。
The properties of deep donor states (DX centers) in III-V alloys are discussed in relation to their influence on device characteristics and performance. The techniques to avoid or minimize such deleterious effects in AlGaAs-based devices are discussed, along with their physical basis, and some guidelines for improved III-V device design are established. New results about the benefits of proper donor selection, the role of In alloying, the advantage of delta doping in layers and in modulation-doped devices, and the use of AlInAs and InGaP as alternative wide band-gap III-V alloys are presented.