Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures
Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures
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DOI：
10.1002/adfm.201500853
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发表时间：
2015-10-01
影响因子：
19
通讯作者：
Aono, Masakazu
中科院分区：
文献类型：
--
作者：
Tsuruoka, Tohru;Valov, Ilia;Aono, Masakazu
研究了Cu、Ag与Ta 2 O 5界面的氧化还原反应以及Ta 2 O 5膜密度对Cu、Ag/Ta 2 O 5/Pt原子开关结构形成过程的影响。循环伏安法测量显示，在对Cu（Ag）电极的正偏压下，Cu优先被氧化为Cu 2+，而Ag被氧化为Ag+离子。随后的负偏压导致界面处的氧化Cu（Ag）离子的还原。从不同偏压扫描速率的结果估计了Cu和Ag离子在Ta 2 O 5膜中的扩散系数。当Ta_2O_5膜的密度降低时，Cu/Ta_2O_5/Pt电池的氧化还原电流增大，电池的形成电压降低。这一结果表明，在理解和控制阻变行为的矩阵氧化物膜的结构特性的重要性。
Cu and Ag redox reactions at the interfaces with Ta2O5 and the impact of Ta2O5 film density on the forming process of Cu,Ag/Ta2O5/Pt atomic switch structures are investigated. Cyclic voltammetry measurements revealed that under positive bias to the Cu (Ag) electrode, Cu is preferentially oxidized to Cu2+, while Ag is oxidized to Ag+ ions. Subsequent negative bias causes a reduction of oxidized Cu (Ag) ions at the interfaces. The diffusion coefficient of the Cu and Ag ions in the Ta2O5 film is estimated from the results from different bias voltage sweep rates. It is also found that the redox current is enhanced and the forming voltage of the Cu/Ta2O5/Pt cell is reduced when the density of the Ta2O5 film is decreased. This result indicates the importance of the structural properties of the matrix oxide film in understanding and controlling resistive switching behavior.