Landau levels in a topological insulator
Landau levels in a topological insulator
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DOI：
10.1103/physrevb.85.155403
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发表时间：
2011-07
影响因子：
3.7
通讯作者：
P. Schwab;M. Dzierzawa
中科院分区：
文献类型：
--
作者：
P. Schwab;M. Dzierzawa
最近的两个实验成功地观察到朗道水平的拓扑绝缘体Bi 2 Se 3的隧穿光谱。为了模拟扫描隧道显微镜针尖对朗道能级的影响，我们在局部静电势的存在下求解二维狄拉克方程。我们发现，STM尖端不仅移动的朗道水平，但也抑制了一个现实的选择参数的负分支的朗道水平。
Two recent experiments successfully observed Landau levels in the tunneling spectra of the topological insulator Bi2Se3. To mimic the influence of a scanning tunneling microscope tip on the Landau levels we solve the two-dimensional Dirac equation in the presence of a localized electrostatic potential. We find that the STM tip not only shifts the Landau levels, but also suppresses for a realistic choice of parameters the negative branch of Landau levels.