Global Simulation of Coupled Carbon and Oxygen Transport in a Unidirectional Solidification Furnace for Solar Cells
Global Simulation of Coupled Carbon and Oxygen Transport in a Unidirectional Solidification Furnace for Solar Cells
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DOI：
10.1149/1.3262584
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发表时间：
2010-02
影响因子：
3.9
通讯作者：
B. Gao;S. Nakano;K. Kakimoto
中科院分区：
文献类型：
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作者：
B. Gao;S. Nakano;K. Kakimoto
为了准确预测太阳能电池用多晶硅材料中的碳、氧杂质，对定向凝固炉内氧碳耦合输运进行了全局模拟。同时考虑了气体流动和硅熔体流动。在杂质的输运过程中发生了五个化学反应。模拟结果与实验数据吻合较好。考察了流速和压力对杂质的影响。增加流量可以同时减少晶体中的碳和氧杂质，尽管碳的减少更明显。提高气压也能明显降低氧杂质，但对碳杂质影响不大。
For an accurate prediction of carbon and oxygen impurities in multicrystalline silicon material for solar cells, global simulation of coupled oxygen and carbon transport in a unidirectional solidification furnace was implemented. Both the gas flow and silicon melt flow were considered. Five chemical reactions were included during the transportation of impurities. The simulation results agreed well with experimental data. The effects of flow rate and pressure on the impurities were examined. An increase in the flow rate can reduce both carbon and oxygen impurities in the crystal, though the reduction of carbon is more obvious. An increase in gas pressure can also obviously reduce the oxygen impurity but has only a small effect on the carbon impurity.