Three-dimensional microfabrication in bulk silicon using high-energy protons
Three-dimensional microfabrication in bulk silicon using high-energy protons
复制标题
使用高能质子在体硅中进行三维微加工
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
D. Blackwood
中科院分区：
文献类型：
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作者：
E. Teo;M. Breese;E. Tavernier;A. Bettiol;F. Watt;Minghui Liu;D. Blackwood
我们报告了一种替代技术，它利用快质子照射之前的电化学蚀刻的三维微细加工体p型硅。质子引起的损伤增加了被照射区域的电阻率，并作为多孔硅形成的蚀刻停止。在用氢氧化钾去除未照射区域后，留下扫描区域的凸起结构。通过将硅暴露于不同的质子能量，可以精确地改变注入深度以及结构高度。我们展示了这种三维图案化工艺的多功能性，以在体硅中创建多级独立桥，以及亚微米柱和高纵横比纳米尖端。
We report an alternative technique which utilizes fast-proton irradiation prior to electrochemical etching for three-dimensional microfabrication in bulk p-type silicon. The proton-induced damage increases the resistivity of the irradiated regions and acts as an etch stop for porous silicon formation. A raised structure of the scanned area is left behind after removal of the unirradiated regions with potassium hydroxide. By exposing the silicon to different proton energies, the implanted depth and hence structure height can be precisely varied. We demonstrate the versatility of this three-dimensional patterning process to create multilevel free-standing bridges in bulk silicon, as well as submicron pillars and high aspect-ratio nanotips.